VPL, BSS Vishay Siliconix. Document Number: S—Rev. E , Jun P-Channel V (D-S) MOSFETs. DATA SHEET. Product specification. Supersedes data of April File under Discrete Semiconductors, SC13b. Jun DISCRETE. BSS92 datasheet, BSS92 circuit, BSS92 data sheet: SIEMENS – SIPMOS Small- Signal Transistor (P channel Enhancement mode Logic Level),alldatasheet.
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The new type of capacitor has a space-saving design with two, three or even ten identical capacitors connected in parallel on the same terminal to increase the capacitance. Specifications Contact Us Ordering Guides. Register Log in Shopping cart 0 You have no items in your shopping cart. Application information Where application information is given, it is advisory and does not form part of the speci? Philips Semiconductors, 6F, No. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the speci?
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BSS92 SIEMENS P-Ch. 電晶體 TO
Hotel Minsk Business Center, Bbss92. Want to gain comprehensive data for BSS92 to optimize the supply chain include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecastsplease contact to our Tech-supports team. Reproduction datasheer whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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P-channel 200-v (d-s) Mosfets – Vishay Siliconix
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Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Relay, high speed and line transformer drivers. Philips Semiconductors Philippines Inc. Please review product page below for detailed information, including BSS92 price, datasheets, in-stock availability, technical difficulties. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. Box JohannesburgTel.
No liability will be accepted by the publisher for any consequence of its use. P-channel enhancement mode vertical D-MOS transistor. Exposure to limiting values for extended periods may affect device reliability. Quickly Enter the access of compare list to find replaceable electronic parts.
Stress above one or more of the limiting values may cause permanent damage to the device.