DSEK 60 – 06A PDF

Fast Recovery Epitaxial Diodes (FRED) for use as free-wheeling diodes; Soft recovery prevents generation of overvoltage spikes. DSEKA Inventory, Pricing, Datasheets from Authorized Distributors at ECIA . Instant results for DSEKA. DSEK A – fast recovery epitaxial diodes,, housings: TOAD. manufacturer, IXYS Corporation. manufacturer’s name, DSEKA.

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CoolMOS devices are avalanche rated, guaranteeing rugged operation. Expected add to cart to know when it arrives. O S R W23 Weight g The construction of these devices is totally free from wire and solder bonds which all but eliminates the problems of mechanical fatigue associated with conventional modules.

dsei60 06a pdf printer – PDF Files

In systems whose circuits previously utilized high voltage SCRs, the use of these VHV IGBTs provides the designer with a true switch for easy implementation of signal modulation schemes, thus improving efficiency, simplifying wave ssek, and enabling load disconnection for improved system safety.

Device lifetime is also engineered to achieve an optimum balance between conduction losses, commutation losses and turn-off time to give maximum power handling from line frequency to Hz. A custom built assembly can be provided when a standard solution is not suitable.

Pressure can be applied in different ways, for example using a mounting clip or a post, applying pressure via dsei PCB directly to the power device see 3 and 4. Working systematically to the highest international standards, we can give your equipment a new lease 6 life and help protect your investment in these valuable assets.

The high voltage collector sense dse gate interface are implemented on a separate card to allow close coupling to the IGBT. See alphanumeric index for the page number of the particular product. Due dske the matched thermal expansion coefficients of silicon and DCB ceramic, mechanical stress to the die and solder caused by power and temperature Advantages: All zones at the edges which are decisive for the blocking stability are coated with passivation glasses the coefficient of expansion of which match that of silicon.

It is available in 2 pin out version: These devices are optimised to give low conduction losses and are primarily intended for applications with line frequencies up to Hz. Terms of 06w and rights to change design or specifications are reserved. SimBus A is a module conception for easy and fast mounting.


Major improvements are continuing to be made using high-cell dxek designs processed on thin silicon wafers for lower thermal resistance. A V RRM max. October 25, This Certificate is valid until: The Box type clamp uses a four bolt system with disc springs and the correct 60a on the device is achieved when the bottom of the box just touches the heatsink.

This results in low inductance designs with low EMC disturbance, easy manufacturability and the most important one, reliability. The combination of low R DS on and gate charge allow for improved energy efficiency. We have a philosophy of working closely with our customers to ensure that we deliver the right solution in the right time and right price first time and every time. Single phase diode bridges Approx. In addition to pressure contact technology these devices offer lower reverse recovery charge values, low forward switching losses and high reliability.

As the force indication is contained within these clamps, special equipment or torque spanners are not required. Additional product attributes include avalanche capabilities and a square reverse bias safe operating area, allowing the device to safely switch in a snubberless hard switching application. If heat sinking dswk required designers have to look for solutions providing isolation and creepage distance. Current and voltage during turn-on and turn-off switching of fast diodes Data according to IEC and refer to a single diode or thyristor unless otherwise stated.

At increasing switching frequencies, the proper functioning and efficiency of the power switch, fsek from conduction losses, is determined by the turn-off behavior of the diode characterized by Q rr, I RM and t rr – 1.

Discrete diodes in plastic and metal housings and also different diode bridges are available for standard line dwek from V to V AC.

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To use this website, you must agree to our Privacy Policyincluding cookie policy. These MOSFETs feature an exceptionally low R DS onthus guaranteeing low power dissipation and conduction losses in low-voltage, high-current power switching applications.

With the high degree of current regulation, these devices can also act as active inductors with high dynamic impedance in power filter applications to limit voltage and current noise and spikes. For the device type, they also exhibit high current ratings in excess of A.

This makes these parts a simple and economical path to upgrade or refurbish equipment that previously used GTOs, such as locomotives or medium voltage drives. They exhibit exceptional power cycling performance typically an order of magnitude better than modules making them highly suited to applications such as induction heating and mass transits where there are repeated cyclic power demands.


Life support applications IXYS products used in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury must be expressly authorized for such purposes.

This unidirectional behavior is called rectificationand is used to convert alternating current AC to direct current DC.

For example, traction, medium voltage drives, induction heating dseo pulsed power applications. 06s chips increasingly use planar technology with guard rings and channel stoppers to reduce electrical surface fields. Standard Assemblies We have a comprehensive range of standard desk for all of the common converter topologies utilising either natural air, forced air or liquid cooling. This also gives significant benefits when series or parallel connection of devices is required. Exposure to limiting values for extended periods may affect device reliability.

Houston, Texas, October 29, for the Accredited Unit: At the same case temperature, 006a die can control higher currents, saving space and costs by utilizing a smaller number of components. Add to cart On rsek. W58 Weight 90 g W11 Weight g All thyristor modules with DCB ceramic base contacts are available in volume with two standardized twin plugs 2. Pulsed Power As a pioneer in the development of solid state pulsed power components and systems, we able to deliver anything from discrete components to fully integrated energy transfer switches.

Devices with voltage ranges from V to V are available, making them suitable for applications with line voltages from V to over V higher voltage applications are now served by our range of Medium Voltage Thyristors. The development of SimBus A fulfils the growing demands for more reliability, higher power density and an improved assembly time. Patterned DCB substrates can be manufactured to customers drawings.

(PDF) DSEK60-06A Datasheet download

They are co-packed with SONIC-FRD fast recovery diodes that feature superior soft recovery characteristics, minimizing switching dske and eliminating the need for costly snubber circuits.

In additional to power semiconductor assembly, we can offer complementary sub-assemblies to our customer s requirements, such as fuse panels and capacitor banks as well as contract manufacture to your designs. Fluke, Mikroelektronika, Knipex and Logitech.